1. Product Scientific Research and Structural Honesty

1.1 Crystal Chemistry and Bonding Characteristics

(Silicon Carbide Crucibles)

Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms set up in a tetrahedral latticework, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying exceptional atomic bond toughness.

The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the strongest in architectural ceramics, giving superior thermal stability, hardness, and resistance to chemical strike.

This robust covalent network leads to a product with a melting point exceeding 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains readily available for high-temperature applications.

Unlike oxide porcelains such as alumina, SiC preserves mechanical strength and creep resistance at temperature levels over 1400 ° C, where several metals and standard porcelains start to soften or break down.

Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for quick thermal biking without devastating cracking, a vital attribute for crucible performance.

These innate residential or commercial properties originate from the well balanced electronegativity and comparable atomic sizes of silicon and carbon, which advertise an extremely steady and densely loaded crystal structure.

1.2 Microstructure and Mechanical Strength

Silicon carbide crucibles are normally produced from sintered or reaction-bonded SiC powders, with microstructure playing a decisive function in longevity and thermal shock resistance.

Sintered SiC crucibles are created with solid-state or liquid-phase sintering at temperatures over 2000 ° C, typically with boron or carbon ingredients to boost densification and grain limit cohesion.

This procedure generates a completely dense, fine-grained framework with marginal porosity (

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